Semiconductor device with lightly doped layer and method of manufacturing the same

A semiconductor device such as a virtual DMOS includes a substrate, a first electrode (8) and a second electrode (9) formed on the substrate, and a drift layer (1) which is formed between the first electrode and the second electrode. A low concentration layer (16) is formed on the outermost side of...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	KOMACHI, TOMONORI
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!