Semiconductor device with lightly doped layer and method of manufacturing the same

Semiconductor device with lightly doped layer and method of manufacturing the same

A semiconductor device such as a virtual DMOS includes a substrate, a first electrode (8) and a second electrode (9) formed on the substrate, and a drift layer (1) which is formed between the first electrode and the second electrode. A low concentration layer (16) is formed on the outermost side of...

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1. Verfasser: KOMACHI, TOMONORI
Format: Patent
Sprache:eng ; fre ; ger
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator KOMACHI, TOMONORI
description A semiconductor device such as a virtual DMOS includes a substrate, a first electrode (8) and a second electrode (9) formed on the substrate, and a drift layer (1) which is formed between the first electrode and the second electrode. A low concentration layer (16) is formed on the outermost side of the drift layer, and has a conductivity type opposite to that of the drift layer, whereby the thickness of the drift layer can be reduced for a given breakdown voltage.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Semiconductor device with lightly doped layer and method of manufacturing the same
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