HARDWARE SECURITY DEVICE FOR MAGNETIC MEMORY CELLS
The present invention provides a special structure of magnetic elements, e.g. MRAM elements (10, 11), as a security device (30) for IC's containing magnetic memory cells. The structure may comprise a combination of two or more associated magnetic elements (10, 11) with pre-set anti-parallel mag...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | eng ; fre ; ger |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | LAMBERT, NICOLAAS DENISSEN, ADRIANUS, J., M LENSSEN, KARS-MICHIEL, H |
| description | The present invention provides a special structure of magnetic elements, e.g. MRAM elements (10, 11), as a security device (30) for IC's containing magnetic memory cells. The structure may comprise a combination of two or more associated magnetic elements (10, 11) with pre-set anti-parallel magnetization directions. By determining the polarisation directions of the magnetic elements, exposure to an external magnetic field can be detected. Inverse polarisation directions indicate a normal situation, aligned polarisation directions indicate that the MRAM-array has been exposed to an external field. In this way it can be detected whether it has been tried to erase or alter the data stored in the MRAM in an illegal way. The IC can regularly check the resistance of the security system during operation. Upon detection of a field exposure, the IC can erase all MRAM data, or can reset itself or block its functioning. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP1576615B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP1576615B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP1576615B13</originalsourceid><addsrcrecordid>eNrjZDDycAxyCXcMclUIdnUODfIMiVRwcQ3zdHZVcPMPUvB1dPdzDfF0VvB19fUPilRwdvXxCeZhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGuAYam5mZmhqZOhsZEKAEALnEmcg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>HARDWARE SECURITY DEVICE FOR MAGNETIC MEMORY CELLS</title><source>esp@cenet</source><creator>LAMBERT, NICOLAAS ; DENISSEN, ADRIANUS, J., M ; LENSSEN, KARS-MICHIEL, H</creator><creatorcontrib>LAMBERT, NICOLAAS ; DENISSEN, ADRIANUS, J., M ; LENSSEN, KARS-MICHIEL, H</creatorcontrib><description>The present invention provides a special structure of magnetic elements, e.g. MRAM elements (10, 11), as a security device (30) for IC's containing magnetic memory cells. The structure may comprise a combination of two or more associated magnetic elements (10, 11) with pre-set anti-parallel magnetization directions. By determining the polarisation directions of the magnetic elements, exposure to an external magnetic field can be detected. Inverse polarisation directions indicate a normal situation, aligned polarisation directions indicate that the MRAM-array has been exposed to an external field. In this way it can be detected whether it has been tried to erase or alter the data stored in the MRAM in an illegal way. The IC can regularly check the resistance of the security system during operation. Upon detection of a field exposure, the IC can erase all MRAM data, or can reset itself or block its functioning.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; CALCULATING ; COMPUTING ; COUNTING ; ELECTRIC DIGITAL DATA PROCESSING ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INFORMATION STORAGE ; PHYSICS ; SEMICONDUCTOR DEVICES ; STATIC STORES</subject><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20110706&DB=EPODOC&CC=EP&NR=1576615B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20110706&DB=EPODOC&CC=EP&NR=1576615B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LAMBERT, NICOLAAS</creatorcontrib><creatorcontrib>DENISSEN, ADRIANUS, J., M</creatorcontrib><creatorcontrib>LENSSEN, KARS-MICHIEL, H</creatorcontrib><title>HARDWARE SECURITY DEVICE FOR MAGNETIC MEMORY CELLS</title><description>The present invention provides a special structure of magnetic elements, e.g. MRAM elements (10, 11), as a security device (30) for IC's containing magnetic memory cells. The structure may comprise a combination of two or more associated magnetic elements (10, 11) with pre-set anti-parallel magnetization directions. By determining the polarisation directions of the magnetic elements, exposure to an external magnetic field can be detected. Inverse polarisation directions indicate a normal situation, aligned polarisation directions indicate that the MRAM-array has been exposed to an external field. In this way it can be detected whether it has been tried to erase or alter the data stored in the MRAM in an illegal way. The IC can regularly check the resistance of the security system during operation. Upon detection of a field exposure, the IC can erase all MRAM data, or can reset itself or block its functioning.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CALCULATING</subject><subject>COMPUTING</subject><subject>COUNTING</subject><subject>ELECTRIC DIGITAL DATA PROCESSING</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2011</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDDycAxyCXcMclUIdnUODfIMiVRwcQ3zdHZVcPMPUvB1dPdzDfF0VvB19fUPilRwdvXxCeZhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGuAYam5mZmhqZOhsZEKAEALnEmcg</recordid><startdate>20110706</startdate><enddate>20110706</enddate><creator>LAMBERT, NICOLAAS</creator><creator>DENISSEN, ADRIANUS, J., M</creator><creator>LENSSEN, KARS-MICHIEL, H</creator><scope>EVB</scope></search><sort><creationdate>20110706</creationdate><title>HARDWARE SECURITY DEVICE FOR MAGNETIC MEMORY CELLS</title><author>LAMBERT, NICOLAAS ; DENISSEN, ADRIANUS, J., M ; LENSSEN, KARS-MICHIEL, H</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP1576615B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2011</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CALCULATING</topic><topic>COMPUTING</topic><topic>COUNTING</topic><topic>ELECTRIC DIGITAL DATA PROCESSING</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>LAMBERT, NICOLAAS</creatorcontrib><creatorcontrib>DENISSEN, ADRIANUS, J., M</creatorcontrib><creatorcontrib>LENSSEN, KARS-MICHIEL, H</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LAMBERT, NICOLAAS</au><au>DENISSEN, ADRIANUS, J., M</au><au>LENSSEN, KARS-MICHIEL, H</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>HARDWARE SECURITY DEVICE FOR MAGNETIC MEMORY CELLS</title><date>2011-07-06</date><risdate>2011</risdate><abstract>The present invention provides a special structure of magnetic elements, e.g. MRAM elements (10, 11), as a security device (30) for IC's containing magnetic memory cells. The structure may comprise a combination of two or more associated magnetic elements (10, 11) with pre-set anti-parallel magnetization directions. By determining the polarisation directions of the magnetic elements, exposure to an external magnetic field can be detected. Inverse polarisation directions indicate a normal situation, aligned polarisation directions indicate that the MRAM-array has been exposed to an external field. In this way it can be detected whether it has been tried to erase or alter the data stored in the MRAM in an illegal way. The IC can regularly check the resistance of the security system during operation. Upon detection of a field exposure, the IC can erase all MRAM data, or can reset itself or block its functioning.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng ; fre ; ger |
| recordid | cdi_epo_espacenet_EP1576615B1 |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS CALCULATING COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES |
| title | HARDWARE SECURITY DEVICE FOR MAGNETIC MEMORY CELLS |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-24T18%3A07%3A04IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=LAMBERT,%20NICOLAAS&rft.date=2011-07-06&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP1576615B1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |