SCATTEROMETRY ALIGNMENT FOR IMPRINT LITHOGRAPHY
Described are methods for patterning a substrate by imprint lithography. Imprint lithography is a process in which a liquid is dispensed onto a substrate. A template is brought into contact with the liquid and the liquid is cured. The cured liquid includes an imprint of any patterns formed in the te...
Gespeichert in:
| Hauptverfasser: | , , , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng ; fre ; ger |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | WATTS, MICHAEL, P.C SREENIVASAN, SIDLGATA, V MCMACKIN, IAN VOISIN, RONALD, D SCHUMAKER, NORMAN, E CHOI, BYUNG-JIN |
| description | Described are methods for patterning a substrate by imprint lithography. Imprint lithography is a process in which a liquid is dispensed onto a substrate. A template is brought into contact with the liquid and the liquid is cured. The cured liquid includes an imprint of any patterns formed in the template. Alignment of the template with a previously formed layer on a substrate, in one embodiment, is accomplished by using scatterometry. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP1573395A4</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP1573395A4</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP1573395A43</originalsourceid><addsrcrecordid>eNrjZNAPdnYMCXEN8vd1DQmKVHD08XT383X1C1Fw8w9S8PQNCPIEsn08Qzz83YMcAzwieRhY0xJzilN5oTQ3g4Kba4izh25qQX58anFBYnJqXmpJvGuAoam5sbGlqaOJMRFKAPkSJjA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SCATTEROMETRY ALIGNMENT FOR IMPRINT LITHOGRAPHY</title><source>esp@cenet</source><creator>WATTS, MICHAEL, P.C ; SREENIVASAN, SIDLGATA, V ; MCMACKIN, IAN ; VOISIN, RONALD, D ; SCHUMAKER, NORMAN, E ; CHOI, BYUNG-JIN</creator><creatorcontrib>WATTS, MICHAEL, P.C ; SREENIVASAN, SIDLGATA, V ; MCMACKIN, IAN ; VOISIN, RONALD, D ; SCHUMAKER, NORMAN, E ; CHOI, BYUNG-JIN</creatorcontrib><description>Described are methods for patterning a substrate by imprint lithography. Imprint lithography is a process in which a liquid is dispensed onto a substrate. A template is brought into contact with the liquid and the liquid is cured. The cured liquid includes an imprint of any patterns formed in the template. Alignment of the template with a previously formed layer on a substrate, in one embodiment, is accomplished by using scatterometry.</description><language>eng ; fre ; ger</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; CINEMATOGRAPHY ; ELECTROGRAPHY ; HOLOGRAPHY ; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES ; MATERIALS THEREFOR ; MEASURING ; MEASURING ANGLES ; MEASURING AREAS ; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS ; MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; TESTING</subject><creationdate>2010</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20100929&DB=EPODOC&CC=EP&NR=1573395A4$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20100929&DB=EPODOC&CC=EP&NR=1573395A4$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>WATTS, MICHAEL, P.C</creatorcontrib><creatorcontrib>SREENIVASAN, SIDLGATA, V</creatorcontrib><creatorcontrib>MCMACKIN, IAN</creatorcontrib><creatorcontrib>VOISIN, RONALD, D</creatorcontrib><creatorcontrib>SCHUMAKER, NORMAN, E</creatorcontrib><creatorcontrib>CHOI, BYUNG-JIN</creatorcontrib><title>SCATTEROMETRY ALIGNMENT FOR IMPRINT LITHOGRAPHY</title><description>Described are methods for patterning a substrate by imprint lithography. Imprint lithography is a process in which a liquid is dispensed onto a substrate. A template is brought into contact with the liquid and the liquid is cured. The cured liquid includes an imprint of any patterns formed in the template. Alignment of the template with a previously formed layer on a substrate, in one embodiment, is accomplished by using scatterometry.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</subject><subject>MATERIALS THEREFOR</subject><subject>MEASURING</subject><subject>MEASURING ANGLES</subject><subject>MEASURING AREAS</subject><subject>MEASURING IRREGULARITIES OF SURFACES OR CONTOURS</subject><subject>MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2010</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNAPdnYMCXEN8vd1DQmKVHD08XT383X1C1Fw8w9S8PQNCPIEsn08Qzz83YMcAzwieRhY0xJzilN5oTQ3g4Kba4izh25qQX58anFBYnJqXmpJvGuAoam5sbGlqaOJMRFKAPkSJjA</recordid><startdate>20100929</startdate><enddate>20100929</enddate><creator>WATTS, MICHAEL, P.C</creator><creator>SREENIVASAN, SIDLGATA, V</creator><creator>MCMACKIN, IAN</creator><creator>VOISIN, RONALD, D</creator><creator>SCHUMAKER, NORMAN, E</creator><creator>CHOI, BYUNG-JIN</creator><scope>EVB</scope></search><sort><creationdate>20100929</creationdate><title>SCATTEROMETRY ALIGNMENT FOR IMPRINT LITHOGRAPHY</title><author>WATTS, MICHAEL, P.C ; SREENIVASAN, SIDLGATA, V ; MCMACKIN, IAN ; VOISIN, RONALD, D ; SCHUMAKER, NORMAN, E ; CHOI, BYUNG-JIN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP1573395A43</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2010</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</topic><topic>MATERIALS THEREFOR</topic><topic>MEASURING</topic><topic>MEASURING ANGLES</topic><topic>MEASURING AREAS</topic><topic>MEASURING IRREGULARITIES OF SURFACES OR CONTOURS</topic><topic>MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>WATTS, MICHAEL, P.C</creatorcontrib><creatorcontrib>SREENIVASAN, SIDLGATA, V</creatorcontrib><creatorcontrib>MCMACKIN, IAN</creatorcontrib><creatorcontrib>VOISIN, RONALD, D</creatorcontrib><creatorcontrib>SCHUMAKER, NORMAN, E</creatorcontrib><creatorcontrib>CHOI, BYUNG-JIN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>WATTS, MICHAEL, P.C</au><au>SREENIVASAN, SIDLGATA, V</au><au>MCMACKIN, IAN</au><au>VOISIN, RONALD, D</au><au>SCHUMAKER, NORMAN, E</au><au>CHOI, BYUNG-JIN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SCATTEROMETRY ALIGNMENT FOR IMPRINT LITHOGRAPHY</title><date>2010-09-29</date><risdate>2010</risdate><abstract>Described are methods for patterning a substrate by imprint lithography. Imprint lithography is a process in which a liquid is dispensed onto a substrate. A template is brought into contact with the liquid and the liquid is cured. The cured liquid includes an imprint of any patterns formed in the template. Alignment of the template with a previously formed layer on a substrate, in one embodiment, is accomplished by using scatterometry.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng ; fre ; ger |
| recordid | cdi_epo_espacenet_EP1573395A4 |
| source | esp@cenet |
| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MATERIALS THEREFOR MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS TESTING |
| title | SCATTEROMETRY ALIGNMENT FOR IMPRINT LITHOGRAPHY |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-18T17%3A04%3A22IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=WATTS,%20MICHAEL,%20P.C&rft.date=2010-09-29&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP1573395A4%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |