PHOTODETECTOR CIRCUITS

A photodetector circuit incorporates an APD detector structure ( 10 ) comprising a p- silicon handle wafer ( 12 ) on which a SiO2 insulation layer ( 14 ) is deposited in known manner. During manufacture a circular opening ( 16 ) is formed through the insulation layer ( 14 ) by conventional photolith...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	MARSHALL, GILLIAN, FIONA, LEONG, WENG, YEE, ROBBINS, DAVID, JOHN
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!