HIGH FREQUENCY SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE

A semiconductor device (10) having a gate (15), a source (19), and a drain (20) with a gate bus (25) and first ground shield (24) patterned from a first metal layer and a second ground shield (31) patterned from a second metal layer. The first ground shield (24) and the second ground shield (31) low...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	DRAGON, CHRISTOPHER, P, BURGER, WAYNE, R, LAMEY, DANIEL, J
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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