HIGH FREQUENCY SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE

HIGH FREQUENCY SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE

A semiconductor device (10) having a gate (15), a source (19), and a drain (20) with a gate bus (25) and first ground shield (24) patterned from a first metal layer and a second ground shield (31) patterned from a second metal layer. The first ground shield (24) and the second ground shield (31) low...

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Hauptverfasser: DRAGON, CHRISTOPHER, P, BURGER, WAYNE, R, LAMEY, DANIEL, J
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator DRAGON, CHRISTOPHER, P
BURGER, WAYNE, R
LAMEY, DANIEL, J
description A semiconductor device (10) having a gate (15), a source (19), and a drain (20) with a gate bus (25) and first ground shield (24) patterned from a first metal layer and a second ground shield (31) patterned from a second metal layer. The first ground shield (24) and the second ground shield (31) lower the capacitance of device (10) making it suitable for high frequency applications and housing in a plastic package.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title HIGH FREQUENCY SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
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