Semiconductor light emitting device in which high-power light output can be obtained with a simple structure

Semiconductor light emitting device includes a semiconductor substrate formed from indium phosphide; an active layer at an upper side of the substrate; and an n- and p-type cladding layers formed from indium phosphide for holding the active layer. Semiconductor light emitting device (30) includes a...

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Bibliographische Detailangaben
Hauptverfasser: SHIMOSE, YOSHIHARU, NAGASHIMA, YASUAKI, YAMADA, ATSUSHI, KIKUGAWA, TOMOYUKI
Format: Patent
Sprache:eng ; fre ; ger
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