Improving nickel silicide - silicon nitride adhesion through surface passivation

A process for forming nickel silicide 170 and silicon nitride 190 structure in a semiconductor integrated circuit device 110 is described. Good adhesion between the nickel silicide 170 and the silicon nitride 190 is accomplished by passivating the nickel silicide surface with nitrogen. The passivati...

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Bibliographische Detailangaben

Hauptverfasser:	TESSMER, GLENN J, MILES, DONALD S, WILLECKE, RALF B, MONTGOMERY, CLINTON L, HEWSON, MELISSA M, KIRKPATRICK, BRIAN, MCKERROW, ANDREW J, JIONG-PING, LU
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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