INJECTION SEEDED F 2? LASER WITH PRE-INJECTED FILTER
A narrow band F2 laser system useful for integrated circuit lithography. An output beam from a first F2 laser gain medium is filtered with a pre-gain filter to produce a seed beam having a bandwidth of about 0.1 pm or less. The seed beam is amplified in a power gain stage which includes a second F2...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | eng ; fre ; ger |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | SANDSTROM, RICHARD, L PARTLO, WILLIAM, N ONKELS, ECKEHARD, D |
| description | A narrow band F2 laser system useful for integrated circuit lithography. An output beam from a first F2 laser gain medium is filtered with a pre-gain filter to produce a seed beam having a bandwidth of about 0.1 pm or less. The seed beam is amplified in a power gain stage which includes a second F2 laser gain medium. The output beam of the system is a pulsed laser beam with a full width half maximum band width of about 0.1 pm or less with pulse energy in excess of about 5 mJ. In a preferred embodiment the pre-gain filter includes a wavelength monitor which permits feedback control over the centerline wavelength so that the pre-gain filter optics can be adjusted to ensure that the desired bandwidth range is injected into the power gain stage. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP1378035A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP1378035A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP1378035A13</originalsourceid><addsrcrecordid>eNrjZDDx9PNydQ7x9PdTCHZ1dXF1UXBTMLJX8HEMdg1SCPcM8VAICHLVhSgCSXr6hLgG8TCwpiXmFKfyQmluBgU31xBnD93Ugvz41OKCxOTUvNSSeNcAQ2NzCwNjU0dDYyKUAAA77iZw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>INJECTION SEEDED F 2? LASER WITH PRE-INJECTED FILTER</title><source>esp@cenet</source><creator>SANDSTROM, RICHARD, L ; PARTLO, WILLIAM, N ; ONKELS, ECKEHARD, D</creator><creatorcontrib>SANDSTROM, RICHARD, L ; PARTLO, WILLIAM, N ; ONKELS, ECKEHARD, D</creatorcontrib><description>A narrow band F2 laser system useful for integrated circuit lithography. An output beam from a first F2 laser gain medium is filtered with a pre-gain filter to produce a seed beam having a bandwidth of about 0.1 pm or less. The seed beam is amplified in a power gain stage which includes a second F2 laser gain medium. The output beam of the system is a pulsed laser beam with a full width half maximum band width of about 0.1 pm or less with pulse energy in excess of about 5 mJ. In a preferred embodiment the pre-gain filter includes a wavelength monitor which permits feedback control over the centerline wavelength so that the pre-gain filter optics can be adjusted to ensure that the desired bandwidth range is injected into the power gain stage.</description><edition>7</edition><language>eng ; fre ; ger</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CINEMATOGRAPHY ; DEVICES USING STIMULATED EMISSION ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES</subject><creationdate>2004</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20040107&DB=EPODOC&CC=EP&NR=1378035A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20040107&DB=EPODOC&CC=EP&NR=1378035A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SANDSTROM, RICHARD, L</creatorcontrib><creatorcontrib>PARTLO, WILLIAM, N</creatorcontrib><creatorcontrib>ONKELS, ECKEHARD, D</creatorcontrib><title>INJECTION SEEDED F 2? LASER WITH PRE-INJECTED FILTER</title><description>A narrow band F2 laser system useful for integrated circuit lithography. An output beam from a first F2 laser gain medium is filtered with a pre-gain filter to produce a seed beam having a bandwidth of about 0.1 pm or less. The seed beam is amplified in a power gain stage which includes a second F2 laser gain medium. The output beam of the system is a pulsed laser beam with a full width half maximum band width of about 0.1 pm or less with pulse energy in excess of about 5 mJ. In a preferred embodiment the pre-gain filter includes a wavelength monitor which permits feedback control over the centerline wavelength so that the pre-gain filter optics can be adjusted to ensure that the desired bandwidth range is injected into the power gain stage.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CINEMATOGRAPHY</subject><subject>DEVICES USING STIMULATED EMISSION</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2004</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDDx9PNydQ7x9PdTCHZ1dXF1UXBTMLJX8HEMdg1SCPcM8VAICHLVhSgCSXr6hLgG8TCwpiXmFKfyQmluBgU31xBnD93Ugvz41OKCxOTUvNSSeNcAQ2NzCwNjU0dDYyKUAAA77iZw</recordid><startdate>20040107</startdate><enddate>20040107</enddate><creator>SANDSTROM, RICHARD, L</creator><creator>PARTLO, WILLIAM, N</creator><creator>ONKELS, ECKEHARD, D</creator><scope>EVB</scope></search><sort><creationdate>20040107</creationdate><title>INJECTION SEEDED F 2? LASER WITH PRE-INJECTED FILTER</title><author>SANDSTROM, RICHARD, L ; PARTLO, WILLIAM, N ; ONKELS, ECKEHARD, D</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP1378035A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2004</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CINEMATOGRAPHY</topic><topic>DEVICES USING STIMULATED EMISSION</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>SANDSTROM, RICHARD, L</creatorcontrib><creatorcontrib>PARTLO, WILLIAM, N</creatorcontrib><creatorcontrib>ONKELS, ECKEHARD, D</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SANDSTROM, RICHARD, L</au><au>PARTLO, WILLIAM, N</au><au>ONKELS, ECKEHARD, D</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>INJECTION SEEDED F 2? LASER WITH PRE-INJECTED FILTER</title><date>2004-01-07</date><risdate>2004</risdate><abstract>A narrow band F2 laser system useful for integrated circuit lithography. An output beam from a first F2 laser gain medium is filtered with a pre-gain filter to produce a seed beam having a bandwidth of about 0.1 pm or less. The seed beam is amplified in a power gain stage which includes a second F2 laser gain medium. The output beam of the system is a pulsed laser beam with a full width half maximum band width of about 0.1 pm or less with pulse energy in excess of about 5 mJ. In a preferred embodiment the pre-gain filter includes a wavelength monitor which permits feedback control over the centerline wavelength so that the pre-gain filter optics can be adjusted to ensure that the desired bandwidth range is injected into the power gain stage.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng ; fre ; ger |
| recordid | cdi_epo_espacenet_EP1378035A1 |
| source | esp@cenet |
| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES |
| title | INJECTION SEEDED F 2? LASER WITH PRE-INJECTED FILTER |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-21T18%3A35%3A22IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=SANDSTROM,%20RICHARD,%20L&rft.date=2004-01-07&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP1378035A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |