METAL-INSULATOR-METAL CAPACITOR IN COPPER

A parallel plate capacitor in copper technology is formed in an area that has no copper below it (within 0.3 mum) with a bottom etch stop layer, a composite bottom plate having an aluminum layer below a TiN layer, an oxide capacitor dielectric, and a top plate of TiN; in a process that involves etch...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ARMACOST, MICHAEL, D, HEIDENREICH, JOHN, E., III, HUECKEL, GARY, R, FRIESE, GERALD, R, AUGUSTIN, ANDREAS, K, STEIN, KENNETH, J
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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