PRODUCTION METHOD FOR SIMOX SUBSTRATE AND SIMOX SUBSTRATE

The present invention provides a SIMOX substrate produced by employing an oxygen ion implantation amount in a low dose range, which substrate is a high quality SOI substrate having an increased thickness of a BOX layer, and a method of producing the same, and more specifically, provides a method of...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KAWAMURA, KEISUKE, MATSUMURA, ATSUKI, TAKAYAMA, SEIJI, NAGATAKE, YOICHI
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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