Method for determining local structures in optical crystals
Method for detecting local structures in optical materials, especially crystals, whereby in a first step schlieren and optical inhomogeneities are detected using divergent white light, while in a second step polarized laser light is used with stress birefringence to detect local defects and structur...
Gespeichert in:
| Hauptverfasser: | , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng ; fre ; ger |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | LEMKE, CHRISTIAN ENGEL, AXEL MOERSEN, EWALD GRABOSCH,GUENTER |
| description | Method for detecting local structures in optical materials, especially crystals, whereby in a first step schlieren and optical inhomogeneities are detected using divergent white light, while in a second step polarized laser light is used with stress birefringence to detect local defects and structural defects with spatial resolution of at least 0.5 mm and in a third step an interferometric examination of the material is executed.
Das beschriebene Verfahren zur Bestimmung lokaler Strukturen in optischen Materialien, wie z.B. Kristallen, umfaßt einen ersten Schritt der visuellen Bestimmung von Defekten, z.B in Form sichtbarer Schlieren, im Material, einen zweiten Schritt bei dem von lokalen Schlieren und Materialfehlern mit einer Ortsauflösung von mindestens 0,5 mm die Spannungsdoppelbrechung bestimmt wird, und einen dritten Schritt, bei dem Materialfehler mit derselben Ortsauflösung von 0,5 mm mittels Interferometrie bestimmt werden. Das Verfahren ist zur Herstellung optischer Elemente, insbesondere für die Mikrolithographie geeignet. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP1376103A2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP1376103A2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP1376103A23</originalsourceid><addsrcrecordid>eNrjZLD2TS3JyE9RSMsvUkhJLUktys3My8xLV8jJT07MUSguKSpNLiktSi1WyMxTyC8oyQSJJhdVFpck5hTzMLCmAalUXijNzaDg5hri7KGbWpAfn1pckJicmpdaEu8aYGhsbmZoYOxoZEyEEgCE-C97</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method for determining local structures in optical crystals</title><source>esp@cenet</source><creator>LEMKE, CHRISTIAN ; ENGEL, AXEL ; MOERSEN, EWALD ; GRABOSCH,GUENTER</creator><creatorcontrib>LEMKE, CHRISTIAN ; ENGEL, AXEL ; MOERSEN, EWALD ; GRABOSCH,GUENTER</creatorcontrib><description>Method for detecting local structures in optical materials, especially crystals, whereby in a first step schlieren and optical inhomogeneities are detected using divergent white light, while in a second step polarized laser light is used with stress birefringence to detect local defects and structural defects with spatial resolution of at least 0.5 mm and in a third step an interferometric examination of the material is executed.
Das beschriebene Verfahren zur Bestimmung lokaler Strukturen in optischen Materialien, wie z.B. Kristallen, umfaßt einen ersten Schritt der visuellen Bestimmung von Defekten, z.B in Form sichtbarer Schlieren, im Material, einen zweiten Schritt bei dem von lokalen Schlieren und Materialfehlern mit einer Ortsauflösung von mindestens 0,5 mm die Spannungsdoppelbrechung bestimmt wird, und einen dritten Schritt, bei dem Materialfehler mit derselben Ortsauflösung von 0,5 mm mittels Interferometrie bestimmt werden. Das Verfahren ist zur Herstellung optischer Elemente, insbesondere für die Mikrolithographie geeignet.</description><edition>7</edition><language>eng ; fre ; ger</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; CINEMATOGRAPHY ; ELECTROGRAPHY ; HOLOGRAPHY ; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES ; MATERIALS THEREFOR ; MEASURING ; MEASURING ANGLES ; MEASURING AREAS ; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS ; MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; TESTING ; TESTING STATIC OR DYNAMIC BALANCE OF MACHINES ORSTRUCTURES ; TESTING STRUCTURES OR APPARATUS NOT OTHERWISE PROVIDED FOR</subject><creationdate>2004</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20040102&DB=EPODOC&CC=EP&NR=1376103A2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20040102&DB=EPODOC&CC=EP&NR=1376103A2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LEMKE, CHRISTIAN</creatorcontrib><creatorcontrib>ENGEL, AXEL</creatorcontrib><creatorcontrib>MOERSEN, EWALD</creatorcontrib><creatorcontrib>GRABOSCH,GUENTER</creatorcontrib><title>Method for determining local structures in optical crystals</title><description>Method for detecting local structures in optical materials, especially crystals, whereby in a first step schlieren and optical inhomogeneities are detected using divergent white light, while in a second step polarized laser light is used with stress birefringence to detect local defects and structural defects with spatial resolution of at least 0.5 mm and in a third step an interferometric examination of the material is executed.
Das beschriebene Verfahren zur Bestimmung lokaler Strukturen in optischen Materialien, wie z.B. Kristallen, umfaßt einen ersten Schritt der visuellen Bestimmung von Defekten, z.B in Form sichtbarer Schlieren, im Material, einen zweiten Schritt bei dem von lokalen Schlieren und Materialfehlern mit einer Ortsauflösung von mindestens 0,5 mm die Spannungsdoppelbrechung bestimmt wird, und einen dritten Schritt, bei dem Materialfehler mit derselben Ortsauflösung von 0,5 mm mittels Interferometrie bestimmt werden. Das Verfahren ist zur Herstellung optischer Elemente, insbesondere für die Mikrolithographie geeignet.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</subject><subject>MATERIALS THEREFOR</subject><subject>MEASURING</subject><subject>MEASURING ANGLES</subject><subject>MEASURING AREAS</subject><subject>MEASURING IRREGULARITIES OF SURFACES OR CONTOURS</subject><subject>MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>TESTING</subject><subject>TESTING STATIC OR DYNAMIC BALANCE OF MACHINES ORSTRUCTURES</subject><subject>TESTING STRUCTURES OR APPARATUS NOT OTHERWISE PROVIDED FOR</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2004</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLD2TS3JyE9RSMsvUkhJLUktys3My8xLV8jJT07MUSguKSpNLiktSi1WyMxTyC8oyQSJJhdVFpck5hTzMLCmAalUXijNzaDg5hri7KGbWpAfn1pckJicmpdaEu8aYGhsbmZoYOxoZEyEEgCE-C97</recordid><startdate>20040102</startdate><enddate>20040102</enddate><creator>LEMKE, CHRISTIAN</creator><creator>ENGEL, AXEL</creator><creator>MOERSEN, EWALD</creator><creator>GRABOSCH,GUENTER</creator><scope>EVB</scope></search><sort><creationdate>20040102</creationdate><title>Method for determining local structures in optical crystals</title><author>LEMKE, CHRISTIAN ; ENGEL, AXEL ; MOERSEN, EWALD ; GRABOSCH,GUENTER</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP1376103A23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2004</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</topic><topic>MATERIALS THEREFOR</topic><topic>MEASURING</topic><topic>MEASURING ANGLES</topic><topic>MEASURING AREAS</topic><topic>MEASURING IRREGULARITIES OF SURFACES OR CONTOURS</topic><topic>MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>TESTING</topic><topic>TESTING STATIC OR DYNAMIC BALANCE OF MACHINES ORSTRUCTURES</topic><topic>TESTING STRUCTURES OR APPARATUS NOT OTHERWISE PROVIDED FOR</topic><toplevel>online_resources</toplevel><creatorcontrib>LEMKE, CHRISTIAN</creatorcontrib><creatorcontrib>ENGEL, AXEL</creatorcontrib><creatorcontrib>MOERSEN, EWALD</creatorcontrib><creatorcontrib>GRABOSCH,GUENTER</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LEMKE, CHRISTIAN</au><au>ENGEL, AXEL</au><au>MOERSEN, EWALD</au><au>GRABOSCH,GUENTER</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for determining local structures in optical crystals</title><date>2004-01-02</date><risdate>2004</risdate><abstract>Method for detecting local structures in optical materials, especially crystals, whereby in a first step schlieren and optical inhomogeneities are detected using divergent white light, while in a second step polarized laser light is used with stress birefringence to detect local defects and structural defects with spatial resolution of at least 0.5 mm and in a third step an interferometric examination of the material is executed.
Das beschriebene Verfahren zur Bestimmung lokaler Strukturen in optischen Materialien, wie z.B. Kristallen, umfaßt einen ersten Schritt der visuellen Bestimmung von Defekten, z.B in Form sichtbarer Schlieren, im Material, einen zweiten Schritt bei dem von lokalen Schlieren und Materialfehlern mit einer Ortsauflösung von mindestens 0,5 mm die Spannungsdoppelbrechung bestimmt wird, und einen dritten Schritt, bei dem Materialfehler mit derselben Ortsauflösung von 0,5 mm mittels Interferometrie bestimmt werden. Das Verfahren ist zur Herstellung optischer Elemente, insbesondere für die Mikrolithographie geeignet.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng ; fre ; ger |
| recordid | cdi_epo_espacenet_EP1376103A2 |
| source | esp@cenet |
| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MATERIALS THEREFOR MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS TESTING TESTING STATIC OR DYNAMIC BALANCE OF MACHINES ORSTRUCTURES TESTING STRUCTURES OR APPARATUS NOT OTHERWISE PROVIDED FOR |
| title | Method for determining local structures in optical crystals |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-20T16%3A30%3A59IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=LEMKE,%20CHRISTIAN&rft.date=2004-01-02&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP1376103A2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |