Method for adjusting the overlay of two masking levels in a photolithographic process

The present invention provides a method for optimizing the overlay adjustment of two mask planes in a photolithographic process for the production of an integrated circuit having the following steps: provision of a substrate (S) with at least one first mask plane (ME), which has been patterned by ex...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	HASSMANN, JENS
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!