Field effect transistor for sensing applications

The present invention is related to a sensing device comprising: a drain electrode, a source electrode, a gate electrode, a semi-conducting channel layer having a first side and a second opposite side, an organic sensing layer having at least one functional group which has the function which is able...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	DE KEERSMAECKER, KOEN, BORGHS, GUSTAAF
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS TESTING
Online-Zugang:	Volltext bestellen
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