High speed method of measuring the threshold voltage and surface doping

A method for measuring threshold voltage and average surface doping concentration of a semiconductor wafer begins by exposing a measurement site to a high intensity light immediately before a measurement sweep begins. A CV measurement sweep is made with the voltage increasing to a maximum voltage, a...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	HOWLAND, WILLIAM H
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS SEMICONDUCTOR DEVICES TESTING
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