MOS transistor and method of manufacturing

A method of fabricating a MOS transistor with a controllable and modulatable conduction path through a dielectric gate oxide is disclosed, wherein the transistor structure comprises a dielectric oxide layer (3) formed between two silicon plates (1,2), and wherein the silicon plates (1,2) overhang th...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	CEROFOLINI, GIANFRANCO, FERLA, GIUSEPPE
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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