E-BEAM/MICROWAVE GAS JET PECVD METHOD AND APPARATUS FOR DEPOSITING AND/OR SURFACE MODIFICATION OF THIN FILM MATERIALS

A novel high speed, high quality plasma enhanced surface modification or CVD thin film deposition method and apparatus. The invention employs both microwave (5) and e beam energy (6) for creation of a plasma of excited species which modify the surface of substrates (2) or are deposited onto substrat...

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Bibliographische Detailangaben
Hauptverfasser:	IZU, MASATSUGU, DOEHLER, JOACHIM, JONES, SCOTT
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A novel high speed, high quality plasma enhanced surface modification or CVD thin film deposition method and apparatus. The invention employs both microwave (5) and e beam energy (6) for creation of a plasma of excited species which modify the surface of substrates (2) or are deposited onto substrates to form the desired thin film. The invention also employs a gas jet system (3) to introduce the reacting species to the plasma. This gas jet system (3) allows for higher deposition speed than conventional PECVD processes while maintaining the desired high quality of the deposited materials.