Lateral power MOSFET

The MOS transistor of lateral structure type is formed in an n-type conductivity epitaxial layer (21) which is formed on the front face of a highly doped n-tpe conductivity substrate (22), and comprises a set of alternating drain regions (D) and source regions (S) separated by channels, a correspond...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	MATTEI, SANDRA, GERMANA, ROSALIA
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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