AN INSITU POST ETCH PROCESS TO REMOVE REMAINING PHOTORESIST AND RESIDUAL SIDEWALL PASSIVATION

A method for performing a metallic etch, etch mask stripping, and removal of residual sidewall passivation in a single etch chamber. A wafer is placed in an etch chamber. A metal etch is performed on the wafer. A stripping gas, such as a mixture of oxygen and argon is provided to the etch chamber an...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	O'DONNELL, ROBERT, J
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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