Thin gallium-arsenide-antimonide base heterojunction bipolar transistor (HBT) having improved gain

An HBT (100) having an InP collector (104), a GaAsSb base (110) and an InP emitter (114) in which the base (110) is constructed using a thin layer of GaAsSb. The thin base (110) can be constructed of a GaAsSb material with a composition having a bulk lattice constant that matches the bulk lattice co...

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Bibliographische Detailangaben

Hauptverfasser:	BOLOGNESI, COLOMBO R, MOLL, NICOLAS J
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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