METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE HAVING A POROUS DIELECTRIC LAYER AND AIR GAPS

The invention relates to a method of manufacturing a semiconductor device, comprising the provision of a dual damascene structure (20). This dual damascene structure (20) comprises a metal layer (1) with thereon a first dielectric layer (2) provided with a via (3). A second dielectric layer (5) is a...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	MUTSAERS, CORNELIS, A., H., A, GRAVESTEIJN, DIRK, J, BESLING, WILLEM, F., A
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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