Microwave cvd method for deposition of robust barrier coatings

A composite material including a microwave-plasma-enhanced-chemical-vapor-deposited silicon oxide barrier coating deposited atop a temperature sensitive substrate obtained by a method including : providing the substrate within a deposition region in an evacuable deposition chamber; evacuating said c...

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Hauptverfasser: IZU, MASATSUGU, DOTTER, BUDDIE
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Sprache:eng ; fre ; ger
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DOTTER, BUDDIE
description A composite material including a microwave-plasma-enhanced-chemical-vapor-deposited silicon oxide barrier coating deposited atop a temperature sensitive substrate obtained by a method including : providing the substrate within a deposition region in an evacuable deposition chamber; evacuating said chamber to a sub-atmospheric pressure; performing a plasma pretreatment of the substrate; introducing a precursor gaseous mixture including at least a silicon-hydrogen containing gas and an oxygen containing gas into said deposition region; directing microwave energy from a source of microwave energy to the deposition region, thereby creating a plasma by interaction of said microwave energy and said precursor gaseous mixture; depositing from said plasma, onto said substrate, the coating, thus providing the coated substrate with oxygen and water vapor barrier properties greater than the non-coated substrate; and introducing a sufficient flow rate of oxygen-containing gas into said precursor gaseous mixture to substantially eliminate the inclusion of silicon-hydrogen bonds into the deposited coating.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP1206908A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP1206908A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP1206908A13</originalsourceid><addsrcrecordid>eNrjZLDzzUwuyi9PLEtVSC5LUchNLcnIT1FIyy9SSEktyC_OLMnMz1PIT1Moyk8qLS5RSEosKspMLVJIzk8sycxLL-ZhYE1LzClO5YXS3AwKbq4hzh66QM3xqcUFicmpeakl8a4BhkYGZpYGFo6GxkQoAQASlTBk</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Microwave cvd method for deposition of robust barrier coatings</title><source>esp@cenet</source><creator>IZU, MASATSUGU ; DOTTER, BUDDIE</creator><creatorcontrib>IZU, MASATSUGU ; DOTTER, BUDDIE</creatorcontrib><description>A composite material including a microwave-plasma-enhanced-chemical-vapor-deposited silicon oxide barrier coating deposited atop a temperature sensitive substrate obtained by a method including : providing the substrate within a deposition region in an evacuable deposition chamber; evacuating said chamber to a sub-atmospheric pressure; performing a plasma pretreatment of the substrate; introducing a precursor gaseous mixture including at least a silicon-hydrogen containing gas and an oxygen containing gas into said deposition region; directing microwave energy from a source of microwave energy to the deposition region, thereby creating a plasma by interaction of said microwave energy and said precursor gaseous mixture; depositing from said plasma, onto said substrate, the coating, thus providing the coated substrate with oxygen and water vapor barrier properties greater than the non-coated substrate; and introducing a sufficient flow rate of oxygen-containing gas into said precursor gaseous mixture to substantially eliminate the inclusion of silicon-hydrogen bonds into the deposited coating.</description><edition>7</edition><language>eng ; fre ; ger</language><subject>ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS,e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES,DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS ; CONVEYING ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRICITY ; HANDLING THIN OR FILAMENTARY MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PACKAGES ; PACKAGING ELEMENTS ; PACKING ; PERFORMING OPERATIONS ; STORING ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TRANSPORTING</subject><creationdate>2002</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20020522&amp;DB=EPODOC&amp;CC=EP&amp;NR=1206908A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20020522&amp;DB=EPODOC&amp;CC=EP&amp;NR=1206908A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>IZU, MASATSUGU</creatorcontrib><creatorcontrib>DOTTER, BUDDIE</creatorcontrib><title>Microwave cvd method for deposition of robust barrier coatings</title><description>A composite material including a microwave-plasma-enhanced-chemical-vapor-deposited silicon oxide barrier coating deposited atop a temperature sensitive substrate obtained by a method including : providing the substrate within a deposition region in an evacuable deposition chamber; evacuating said chamber to a sub-atmospheric pressure; performing a plasma pretreatment of the substrate; introducing a precursor gaseous mixture including at least a silicon-hydrogen containing gas and an oxygen containing gas into said deposition region; directing microwave energy from a source of microwave energy to the deposition region, thereby creating a plasma by interaction of said microwave energy and said precursor gaseous mixture; depositing from said plasma, onto said substrate, the coating, thus providing the coated substrate with oxygen and water vapor barrier properties greater than the non-coated substrate; and introducing a sufficient flow rate of oxygen-containing gas into said precursor gaseous mixture to substantially eliminate the inclusion of silicon-hydrogen bonds into the deposited coating.</description><subject>ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS,e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES,DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS</subject><subject>CONVEYING</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRICITY</subject><subject>HANDLING THIN OR FILAMENTARY MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PACKAGES</subject><subject>PACKAGING ELEMENTS</subject><subject>PACKING</subject><subject>PERFORMING OPERATIONS</subject><subject>STORING</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2002</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLDzzUwuyi9PLEtVSC5LUchNLcnIT1FIyy9SSEktyC_OLMnMz1PIT1Moyk8qLS5RSEosKspMLVJIzk8sycxLL-ZhYE1LzClO5YXS3AwKbq4hzh66QM3xqcUFicmpeakl8a4BhkYGZpYGFo6GxkQoAQASlTBk</recordid><startdate>20020522</startdate><enddate>20020522</enddate><creator>IZU, MASATSUGU</creator><creator>DOTTER, BUDDIE</creator><scope>EVB</scope></search><sort><creationdate>20020522</creationdate><title>Microwave cvd method for deposition of robust barrier coatings</title><author>IZU, MASATSUGU ; DOTTER, BUDDIE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP1206908A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2002</creationdate><topic>ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS,e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES,DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS</topic><topic>CONVEYING</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRICITY</topic><topic>HANDLING THIN OR FILAMENTARY MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>PACKAGES</topic><topic>PACKAGING ELEMENTS</topic><topic>PACKING</topic><topic>PERFORMING OPERATIONS</topic><topic>STORING</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>IZU, MASATSUGU</creatorcontrib><creatorcontrib>DOTTER, BUDDIE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>IZU, MASATSUGU</au><au>DOTTER, BUDDIE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Microwave cvd method for deposition of robust barrier coatings</title><date>2002-05-22</date><risdate>2002</risdate><abstract>A composite material including a microwave-plasma-enhanced-chemical-vapor-deposited silicon oxide barrier coating deposited atop a temperature sensitive substrate obtained by a method including : providing the substrate within a deposition region in an evacuable deposition chamber; evacuating said chamber to a sub-atmospheric pressure; performing a plasma pretreatment of the substrate; introducing a precursor gaseous mixture including at least a silicon-hydrogen containing gas and an oxygen containing gas into said deposition region; directing microwave energy from a source of microwave energy to the deposition region, thereby creating a plasma by interaction of said microwave energy and said precursor gaseous mixture; depositing from said plasma, onto said substrate, the coating, thus providing the coated substrate with oxygen and water vapor barrier properties greater than the non-coated substrate; and introducing a sufficient flow rate of oxygen-containing gas into said precursor gaseous mixture to substantially eliminate the inclusion of silicon-hydrogen bonds into the deposited coating.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record>
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language eng ; fre ; ger
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source esp@cenet
subjects ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS,e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES,DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS
CONVEYING
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
HANDLING THIN OR FILAMENTARY MATERIAL
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
PACKAGES
PACKAGING ELEMENTS
PACKING
PERFORMING OPERATIONS
STORING
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
TRANSPORTING
title Microwave cvd method for deposition of robust barrier coatings
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T11%3A18%3A20IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=IZU,%20MASATSUGU&rft.date=2002-05-22&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP1206908A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true