PLASMA TREATMENT OF THERMAL CVD TAN FILMS FROM TANTALUM HALIDE PRECURSORS

A plasma treated chemical vapor deposition (PTTCVD) method for depositing high quality conformal tantalum nitride (TaNx) films from inorganic tantalum halide (TaX5) precursors and a nitrogen containing gas is described. The inorganic tantalum halide precursors are tantalum pentafluoride (TaF5), tant...

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Bibliographische Detailangaben

Hauptverfasser:	HAUTALA, JOHN, J, WESTENDORP, JOHANNES, F., M
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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