Trench gate MIS device and method of fabricating the same

In a trench-gated MIS semiconductor device (20), a plug of undoped polysilicon (22) is deposited at the bottom of the trench (18) to protect the gate oxide (15,21) in this area against the high electric fields that can occur in this area. The plug may be formed over a thick oxide layer (31) at the b...

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Bibliographische Detailangaben

Hauptverfasser:	LUI, KAM HONG, GILES, FREDERIK P
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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