JUNCTION-GATE FIELD-EFFECT TRANSISTOR WITH HIGHLY DOPED CONNECTING AREAS

JUNCTION-GATE FIELD-EFFECT TRANSISTOR WITH HIGHLY DOPED CONNECTING AREAS

A junction field-effect transistor containing a semiconductor region with an inner region is described. In addition, a first and a second connecting region, respectively, are disposed within the semiconductor region. The first connecting region has the same conductivity type as the inner region, but...

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Hauptverfasser: MITLEHNER, HEINZ, STEPHANI, DIETRICH, TIHANYI, JENOE
Format: Patent
Sprache:eng ; fre ; ger
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator MITLEHNER, HEINZ
STEPHANI, DIETRICH
TIHANYI, JENOE
description A junction field-effect transistor containing a semiconductor region with an inner region is described. In addition, a first and a second connecting region, respectively, are disposed within the semiconductor region. The first connecting region has the same conductivity type as the inner region, but in a higher doping concentration. The second connecting region has the opposite conductivity type to that of the inner region. This reduces the forward resistance while at the same time maintaining a high reverse voltage strength.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title JUNCTION-GATE FIELD-EFFECT TRANSISTOR WITH HIGHLY DOPED CONNECTING AREAS
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