METHOD OF SUPPRESSING ANOMALOUS INCREASES IN THE THRESHOLD VOLTAGE OF A SEMICONDUCTOR DEVICE

In an example embodiment, a method for manufacturing a semiconductor device having shallow trench isolation comprises forming a trench region in a substrate having a substantially planar bottom, a first and second sidewall. In the trench region, the method forms a dielectric liner on the bottom and...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	NOURI, FARAN
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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