A capacitor for integration with copper damascene structure and manufacturing method

The present invention provides a capacitor for use in a semiconductor device having a damascene interconnect structure, such as a dual damascene interconnect, formed over a substrate of a semiconductor wafer. In one particularly advantageous embodiment, the capacitor, comprises a first capacitor ele...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HARRIS, EDWARD BELDEN, MERCHANT, SAILESH MANSINH, DOWNEY, STEPHEN WARD
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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