Method for forming an oxide layer on semiconductor wafers
A method for forming, by means of water vapor, an oxidation layer on a number of wafers manufactured from semiconducting material, wherein a number of wafers are disposed one above the other and introduced into a vertical process chamber in which a substantially atmospheric pressure prevails and in...
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| creator | VERMEULEN, WILLEM JOB CORNELIS OOSTERLAKEN, THEODORUS GERARDUS MARIA WIERTS, ERIK BEULENS, JACOBUS JOHANNES PHILIPPSEN, BENGT |
| description | A method for forming, by means of water vapor, an oxidation layer on a number of wafers manufactured from semiconducting material, wherein a number of wafers are disposed one above the other and introduced into a vertical process chamber in which a substantially atmospheric pressure prevails and in which the wafers are brought to an increased temperature and maintained at that temperature, wherein for forming the water vapor, a first gas, containing hydrogen, is mixed with a second gas, containing oxygen, the concentration of hydrogen in the first gas and/or the concentration of oxygen in the second gas and/or the ratio of the flow rates of the first and the second gas being such that during mixing of the first and the second gas, explosion of the third gas mixture formed therefrom is impossible. The invention also relates to a wafer processing furnace suitable and intended for performing the above-described method. |
| format | Patent |
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The invention also relates to a wafer processing furnace suitable and intended for performing the above-described method.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2008</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20081231&DB=EPODOC&CC=EP&NR=1104012B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20081231&DB=EPODOC&CC=EP&NR=1104012B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>VERMEULEN, WILLEM JOB CORNELIS</creatorcontrib><creatorcontrib>OOSTERLAKEN, THEODORUS GERARDUS MARIA</creatorcontrib><creatorcontrib>WIERTS, ERIK</creatorcontrib><creatorcontrib>BEULENS, JACOBUS JOHANNES</creatorcontrib><creatorcontrib>PHILIPPSEN, BENGT</creatorcontrib><title>Method for forming an oxide layer on semiconductor wafers</title><description>A method for forming, by means of water vapor, an oxidation layer on a number of wafers manufactured from semiconducting material, wherein a number of wafers are disposed one above the other and introduced into a vertical process chamber in which a substantially atmospheric pressure prevails and in which the wafers are brought to an increased temperature and maintained at that temperature, wherein for forming the water vapor, a first gas, containing hydrogen, is mixed with a second gas, containing oxygen, the concentration of hydrogen in the first gas and/or the concentration of oxygen in the second gas and/or the ratio of the flow rates of the first and the second gas being such that during mixing of the first and the second gas, explosion of the third gas mixture formed therefrom is impossible. 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| language | eng ; fre ; ger |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Method for forming an oxide layer on semiconductor wafers |
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