Method for detecting an end point for an oxygen free plasma process

A method for determining an endpoint for an oxygen free plasma stripping process for use in semiconductor wafer processing. The method comprises exciting a gas composition containing a nitrogen gas and a reactive gas to form the oxygen free plasma. The oxygen free plasma reacts with a substrate 88 h...

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Bibliographische Detailangaben
Hauptverfasser:	SAKTHIVEL, PALANI, HAN, QUIGYAN, CARDOSO, ANDRE GIL, RUFFIN, RICKY
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MATERIALS THEREFOR MEASURING ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES TESTING
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