Heating apparatus for bump bonding and bump bonding method
An object of the present invention is to provide a bump-bonding heating apparatus, a bump bonding method, a bump forming apparatus which do not involve large-sized apparatus configuration and which are easy to handle, and a semiconductor wafer in which bumps are formed by using the bump bonding meth...
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creator | MAE, TAKAHARU KANAYAMA, SHINJI NARITA, SHORIKI WATANABE, NOBUHISA IMANISHI, MAKOTO |
description | An object of the present invention is to provide a bump-bonding heating apparatus, a bump bonding method, a bump forming apparatus which do not involve large-sized apparatus configuration and which are easy to handle, and a semiconductor wafer in which bumps are formed by using the bump bonding method. The bump-bonding heating apparatus has a wafer turning member 111, a turning unit 112 and a wafer heating unit 113. The turning member is turned by the turning unit without turning the wafer heating unit, whereby a semiconductor wafer 201 mounted on the turning member is turned. Like this, since the wafer heating unit is not turned, apparatus configuration can be compacted. Since the turning member is turned directly by the turning unit, the turning angle of the semiconductor wafer can be implemented with higher precision as compared with the conventional gas floating type turning method. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP1094499B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP1094499B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP1094499B13</originalsourceid><addsrcrecordid>eNrjZLDySE0sycxLV0gsKEgsSiwpLVZIyy9SSCrNLVBIys9LAUvlpaAK5KaWZOSn8DCwpiXmFKfyQmluBgU31xBnD93Ugvz41OKCxOTUvNSSeNcAQwNLExNLSydDYyKUAAAJVS6J</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Heating apparatus for bump bonding and bump bonding method</title><source>esp@cenet</source><creator>MAE, TAKAHARU ; KANAYAMA, SHINJI ; NARITA, SHORIKI ; WATANABE, NOBUHISA ; IMANISHI, MAKOTO</creator><creatorcontrib>MAE, TAKAHARU ; KANAYAMA, SHINJI ; NARITA, SHORIKI ; WATANABE, NOBUHISA ; IMANISHI, MAKOTO</creatorcontrib><description>An object of the present invention is to provide a bump-bonding heating apparatus, a bump bonding method, a bump forming apparatus which do not involve large-sized apparatus configuration and which are easy to handle, and a semiconductor wafer in which bumps are formed by using the bump bonding method. The bump-bonding heating apparatus has a wafer turning member 111, a turning unit 112 and a wafer heating unit 113. The turning member is turned by the turning unit without turning the wafer heating unit, whereby a semiconductor wafer 201 mounted on the turning member is turned. Like this, since the wafer heating unit is not turned, apparatus configuration can be compacted. Since the turning member is turned directly by the turning unit, the turning angle of the semiconductor wafer can be implemented with higher precision as compared with the conventional gas floating type turning method.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2009</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20090701&DB=EPODOC&CC=EP&NR=1094499B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25544,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20090701&DB=EPODOC&CC=EP&NR=1094499B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MAE, TAKAHARU</creatorcontrib><creatorcontrib>KANAYAMA, SHINJI</creatorcontrib><creatorcontrib>NARITA, SHORIKI</creatorcontrib><creatorcontrib>WATANABE, NOBUHISA</creatorcontrib><creatorcontrib>IMANISHI, MAKOTO</creatorcontrib><title>Heating apparatus for bump bonding and bump bonding method</title><description>An object of the present invention is to provide a bump-bonding heating apparatus, a bump bonding method, a bump forming apparatus which do not involve large-sized apparatus configuration and which are easy to handle, and a semiconductor wafer in which bumps are formed by using the bump bonding method. The bump-bonding heating apparatus has a wafer turning member 111, a turning unit 112 and a wafer heating unit 113. The turning member is turned by the turning unit without turning the wafer heating unit, whereby a semiconductor wafer 201 mounted on the turning member is turned. Like this, since the wafer heating unit is not turned, apparatus configuration can be compacted. Since the turning member is turned directly by the turning unit, the turning angle of the semiconductor wafer can be implemented with higher precision as compared with the conventional gas floating type turning method.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2009</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLDySE0sycxLV0gsKEgsSiwpLVZIyy9SSCrNLVBIys9LAUvlpaAK5KaWZOSn8DCwpiXmFKfyQmluBgU31xBnD93Ugvz41OKCxOTUvNSSeNcAQwNLExNLSydDYyKUAAAJVS6J</recordid><startdate>20090701</startdate><enddate>20090701</enddate><creator>MAE, TAKAHARU</creator><creator>KANAYAMA, SHINJI</creator><creator>NARITA, SHORIKI</creator><creator>WATANABE, NOBUHISA</creator><creator>IMANISHI, MAKOTO</creator><scope>EVB</scope></search><sort><creationdate>20090701</creationdate><title>Heating apparatus for bump bonding and bump bonding method</title><author>MAE, TAKAHARU ; KANAYAMA, SHINJI ; NARITA, SHORIKI ; WATANABE, NOBUHISA ; IMANISHI, MAKOTO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP1094499B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2009</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>MAE, TAKAHARU</creatorcontrib><creatorcontrib>KANAYAMA, SHINJI</creatorcontrib><creatorcontrib>NARITA, SHORIKI</creatorcontrib><creatorcontrib>WATANABE, NOBUHISA</creatorcontrib><creatorcontrib>IMANISHI, MAKOTO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MAE, TAKAHARU</au><au>KANAYAMA, SHINJI</au><au>NARITA, SHORIKI</au><au>WATANABE, NOBUHISA</au><au>IMANISHI, MAKOTO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Heating apparatus for bump bonding and bump bonding method</title><date>2009-07-01</date><risdate>2009</risdate><abstract>An object of the present invention is to provide a bump-bonding heating apparatus, a bump bonding method, a bump forming apparatus which do not involve large-sized apparatus configuration and which are easy to handle, and a semiconductor wafer in which bumps are formed by using the bump bonding method. The bump-bonding heating apparatus has a wafer turning member 111, a turning unit 112 and a wafer heating unit 113. The turning member is turned by the turning unit without turning the wafer heating unit, whereby a semiconductor wafer 201 mounted on the turning member is turned. Like this, since the wafer heating unit is not turned, apparatus configuration can be compacted. Since the turning member is turned directly by the turning unit, the turning angle of the semiconductor wafer can be implemented with higher precision as compared with the conventional gas floating type turning method.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | Heating apparatus for bump bonding and bump bonding method |
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