A PLASMA GENERATING APPARATUS HAVING AN ELECTROSTATIC SHIELD
A plasma generating source for processing semiconductor integrated circuits is provided. The plasma generating source is configured to control the amount of electromagnetic energy and the distribution of the electric and magnet energies coupled to the plasma. The plasma generating source comprises a...
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| creator | YOUNG, LYDIA, J PACAK, VOJTECH |
| description | A plasma generating source for processing semiconductor integrated circuits is provided. The plasma generating source is configured to control the amount of electromagnetic energy and the distribution of the electric and magnet energies coupled to the plasma. The plasma generating source comprises a plasma containing region and a source of electromagnetic energy for generating a plasma. An electrostatic shield is disposed between the source of electromagnetic energy and the plasma containing region. The electrostatic shield has a plurality of openings therethrough configured to control the amount and distribution of electromagnetic energy coupled from the source into the plasma containing region. The openings may be configured in a variety of ways to control the magnitude and distribution of electromagnetic energy coupled to the plasma. |
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The plasma generating source is configured to control the amount of electromagnetic energy and the distribution of the electric and magnet energies coupled to the plasma. The plasma generating source comprises a plasma containing region and a source of electromagnetic energy for generating a plasma. An electrostatic shield is disposed between the source of electromagnetic energy and the plasma containing region. The electrostatic shield has a plurality of openings therethrough configured to control the amount and distribution of electromagnetic energy coupled from the source into the plasma containing region. The openings may be configured in a variety of ways to control the magnitude and distribution of electromagnetic energy coupled to the plasma.</description><edition>7</edition><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PLASMA TECHNIQUE ; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS ; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2007</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20070110&DB=EPODOC&CC=EP&NR=1040500A4$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20070110&DB=EPODOC&CC=EP&NR=1040500A4$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YOUNG, LYDIA, J</creatorcontrib><creatorcontrib>PACAK, VOJTECH</creatorcontrib><title>A PLASMA GENERATING APPARATUS HAVING AN ELECTROSTATIC SHIELD</title><description>A plasma generating source for processing semiconductor integrated circuits is provided. 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The openings may be configured in a variety of ways to control the magnitude and distribution of electromagnetic energy coupled to the plasma.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PLASMA TECHNIQUE</subject><subject>PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS</subject><subject>PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2007</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLBxVAjwcQz2dVRwd_VzDXIM8fRzV3AMCHAEMkODFTwcw8ACfgquPq7OIUH-wSFAJc4KwR6erj4uPAysaYk5xam8UJqbQcHNNcTZQze1ID8-tbggMTk1L7Uk3jXA0MDEwNTAwNHEmAglAKIvKPQ</recordid><startdate>20070110</startdate><enddate>20070110</enddate><creator>YOUNG, LYDIA, J</creator><creator>PACAK, VOJTECH</creator><scope>EVB</scope></search><sort><creationdate>20070110</creationdate><title>A PLASMA GENERATING APPARATUS HAVING AN ELECTROSTATIC SHIELD</title><author>YOUNG, LYDIA, J ; PACAK, VOJTECH</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP1040500A43</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2007</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>PLASMA TECHNIQUE</topic><topic>PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS</topic><topic>PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>YOUNG, LYDIA, J</creatorcontrib><creatorcontrib>PACAK, VOJTECH</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YOUNG, LYDIA, J</au><au>PACAK, VOJTECH</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>A PLASMA GENERATING APPARATUS HAVING AN ELECTROSTATIC SHIELD</title><date>2007-01-10</date><risdate>2007</risdate><abstract>A plasma generating source for processing semiconductor integrated circuits is provided. The plasma generating source is configured to control the amount of electromagnetic energy and the distribution of the electric and magnet energies coupled to the plasma. The plasma generating source comprises a plasma containing region and a source of electromagnetic energy for generating a plasma. An electrostatic shield is disposed between the source of electromagnetic energy and the plasma containing region. The electrostatic shield has a plurality of openings therethrough configured to control the amount and distribution of electromagnetic energy coupled from the source into the plasma containing region. The openings may be configured in a variety of ways to control the magnitude and distribution of electromagnetic energy coupled to the plasma.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| language | eng ; fre ; ger |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | A PLASMA GENERATING APPARATUS HAVING AN ELECTROSTATIC SHIELD |
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