PIN photodiode having a wide bandwidth

A PIN photodiode comprising a p region (102) containing a p type dopant, an n region (104) containing an n type dopant, an i region (106) positioned intermediate the p region and the n region, and a relatively thick, undoped buffer region (122) positioned between the n region and the i region which...

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Bibliographische Detailangaben

Hauptverfasser:	CHANG, CHIA C, LEE, KEON M, FRAHM, ROBERT EUGENE, LORIMOR, ORVAL GEORGE, ZOLNOWSKI, DENNIS RONALD
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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