Manufacturing method for an IGBT gate electrode

Production of the gate electrode of an insulated-gate bipolar transistor (IGBT) starting with an electrically conducting plate (20) covered with an insulating layer (22) and having connection plots (26,28) to be joined by soldering to connection pads of an integrated circuit chip, includes forming a...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	RANCHY, ERIC, CHANGEY, NICOLAS, PETITBON, ALAIN, CROUZY, SOPHIE
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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