Manufacturing method for an IGBT gate electrode

Production of the gate electrode of an insulated-gate bipolar transistor (IGBT) starting with an electrically conducting plate (20) covered with an insulating layer (22) and having connection plots (26,28) to be joined by soldering to connection pads of an integrated circuit chip, includes forming a conducting layer (30) covering the insulating layer (22), forming a conducting supply track and covering the track. The plate (20) is made of anodized metallic material, e.g. aluminum, and the conducting layer (30) and the supply track are formed by local metallization of the anodized layer. The local metallization of anodized layer is carried out by a laser treatment, and after the laser treatment a layer of metal is applied to the formed track. The supply track is covered by a second insulating layer, which can be done by anodizing the track. The connection plot is further coated with a layer of an antioxidant material as e.g. nickel, chromium, gold, or an alloy of these metals.