Device for processing a surface of a substrate

A structuring device (SD) for processing a surface of a substrate (SB), comprising a substrate chamber (VC) for mounting the substrate (SB) and a reaction chamber (GC) enabling a gas reaction at a given operating pressure. The reaction chamber (GC) has at least one gas inlet (GL) for a reaction gas...

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Bibliographische Detailangaben
Hauptverfasser:	SHVETS, IGOR V, LOESCHNER, HANS, RANGELOW, IVAJLO W, GUETHNER, PETER, MARIOTTO, GUIDO, VOIGT, JENS
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MICROSTRUCTURAL TECHNOLOGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE PERFORMING OPERATIONS PLASMA TECHNIQUE PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING
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Beschreibung
Zusammenfassung:	A structuring device (SD) for processing a surface of a substrate (SB), comprising a substrate chamber (VC) for mounting the substrate (SB) and a reaction chamber (GC) enabling a gas reaction at a given operating pressure. The reaction chamber (GC) has at least one gas inlet (GL) for a reaction gas and at least one injection outlet (JL) leading into the substrate chamber, while the substrate chamber (VC) is provided with a pumping system (PP) for maintaining a vacuum within the substrate chamber at a pressure not above the operating pressure of the gas reaction in the reaction chamber (GC). The injection outlet (JL) is provided with at least one injection pipe ending into an injection opening of given width, the injection pipe having a length not smaller than the width of the injection opening, the injection pipe forming the gas particles originating from the gas reaction into a gas jet streaming out of the injection opening. For controlling the distance between the injection opening and the substrate surface (SB) at a height of the order of or below the width of the opening as measured along the axis of the injection pipe, the injection outlet and/or the substrate are provided with a positioning means (NP,SP).