Multi-quantum well lasers with selectively doped barriers
An MQW laser comprises an active region in which a multiplicity of barriers each includes a doped barrier layer separated from its adjacent quantum well layers by undoped barrier layers. In a preferred embodiment, each barrier of an InGaAsP/InP SCH MQW laser includes a p-type (e.g., Be, Mg or C) del...
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| creator | ANSELM, KLAUS ALEXANDER CHO. ALFRED YI BAILLARGEON, JAMES NELSON |
| description | An MQW laser comprises an active region in which a multiplicity of barriers each includes a doped barrier layer separated from its adjacent quantum well layers by undoped barrier layers. In a preferred embodiment, each barrier of an InGaAsP/InP SCH MQW laser includes a p-type (e.g., Be, Mg or C) delta-doped InGaAsP barrier layer sandwiched between a pair of undoped InGaAsP barrier layers. With suitable doping concentration and thickness of the delta-doped barrier layer, we have demonstrated MQW lasers with To as high as 82 K. |
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ALFRED YI ; BAILLARGEON, JAMES NELSON</creatorcontrib><description>An MQW laser comprises an active region in which a multiplicity of barriers each includes a doped barrier layer separated from its adjacent quantum well layers by undoped barrier layers. In a preferred embodiment, each barrier of an InGaAsP/InP SCH MQW laser includes a p-type (e.g., Be, Mg or C) delta-doped InGaAsP barrier layer sandwiched between a pair of undoped InGaAsP barrier layers. With suitable doping concentration and thickness of the delta-doped barrier layer, we have demonstrated MQW lasers with To as high as 82 K.</description><edition>7</edition><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; DEVICES USING STIMULATED EMISSION ; ELECTRICITY</subject><creationdate>2000</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20000209&DB=EPODOC&CC=EP&NR=0978912A2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20000209&DB=EPODOC&CC=EP&NR=0978912A2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ANSELM, KLAUS ALEXANDER</creatorcontrib><creatorcontrib>CHO. ALFRED YI</creatorcontrib><creatorcontrib>BAILLARGEON, JAMES NELSON</creatorcontrib><title>Multi-quantum well lasers with selectively doped barriers</title><description>An MQW laser comprises an active region in which a multiplicity of barriers each includes a doped barrier layer separated from its adjacent quantum well layers by undoped barrier layers. In a preferred embodiment, each barrier of an InGaAsP/InP SCH MQW laser includes a p-type (e.g., Be, Mg or C) delta-doped InGaAsP barrier layer sandwiched between a pair of undoped InGaAsP barrier layers. With suitable doping concentration and thickness of the delta-doped barrier layer, we have demonstrated MQW lasers with To as high as 82 K.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>DEVICES USING STIMULATED EMISSION</subject><subject>ELECTRICITY</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2000</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLD0Lc0pydQtLE3MKynNVShPzclRyEksTi0qVijPLMlQKE7NSU0uySxLzalUSMkvSE1RSEosKsoEyvMwsKYl5hSn8kJpbgYFN9cQZw_d1IL8-NTigsTk1LzUknjXAANLcwtLQyNHI2MilAAAIsQu3g</recordid><startdate>20000209</startdate><enddate>20000209</enddate><creator>ANSELM, KLAUS ALEXANDER</creator><creator>CHO. ALFRED YI</creator><creator>BAILLARGEON, JAMES NELSON</creator><scope>EVB</scope></search><sort><creationdate>20000209</creationdate><title>Multi-quantum well lasers with selectively doped barriers</title><author>ANSELM, KLAUS ALEXANDER ; CHO. ALFRED YI ; BAILLARGEON, JAMES NELSON</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP0978912A23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2000</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>DEVICES USING STIMULATED EMISSION</topic><topic>ELECTRICITY</topic><toplevel>online_resources</toplevel><creatorcontrib>ANSELM, KLAUS ALEXANDER</creatorcontrib><creatorcontrib>CHO. ALFRED YI</creatorcontrib><creatorcontrib>BAILLARGEON, JAMES NELSON</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ANSELM, KLAUS ALEXANDER</au><au>CHO. ALFRED YI</au><au>BAILLARGEON, JAMES NELSON</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Multi-quantum well lasers with selectively doped barriers</title><date>2000-02-09</date><risdate>2000</risdate><abstract>An MQW laser comprises an active region in which a multiplicity of barriers each includes a doped barrier layer separated from its adjacent quantum well layers by undoped barrier layers. In a preferred embodiment, each barrier of an InGaAsP/InP SCH MQW laser includes a p-type (e.g., Be, Mg or C) delta-doped InGaAsP barrier layer sandwiched between a pair of undoped InGaAsP barrier layers. With suitable doping concentration and thickness of the delta-doped barrier layer, we have demonstrated MQW lasers with To as high as 82 K.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| language | eng ; fre ; ger |
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| subjects | BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRICITY |
| title | Multi-quantum well lasers with selectively doped barriers |
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