Method of producing semiconductor thin film and method of producing solar cell using same
Provided is a method of producing a semiconductor thin film wherein while a semiconductor thin film formed on a substrate is supported on a curved surface of a support member having the curved surface, the support member is rotated, thereby peeling the semiconductor thin film away from the substrate...
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| creator | MIZUTANI, MASAKI NAKAGAWA, KATSUMI IWASAKI, YUKIKO SHOJI, TATSUMI UKIYO, NORITAKA TANIKAWA, ISAO |
| description | Provided is a method of producing a semiconductor thin film wherein while a semiconductor thin film formed on a substrate is supported on a curved surface of a support member having the curved surface, the support member is rotated, thereby peeling the semiconductor thin film away from the substrate. Also provided is a method of producing a semiconductor thin film having the step of peeling a semiconductor thin film formed on a substrate away from the substrate, wherein the peeling step is carried out after the substrate is secured on a substrate support member without an adhesive. These provide the method of peeling the semiconductor thin film away from the substrate without damage and the method of holding the substrate without contamination. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP0965664B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP0965664B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP0965664B13</originalsourceid><addsrcrecordid>eNrjZIj0TS3JyE9RyE9TKCjKTylNzsxLVyhOzc1Mzs8D8kryixRKMjLzFNIyc3IVEvNSFHKxqc_PSSxSSE7NyVEoLQYLJOam8jCwpiXmFKfyQmluBgU31xBnD93Ugvz41OKCxOTUvNSSeNcAA0szUzMzEydDYyKUAAB00zpO</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method of producing semiconductor thin film and method of producing solar cell using same</title><source>esp@cenet</source><creator>MIZUTANI, MASAKI ; NAKAGAWA, KATSUMI ; IWASAKI, YUKIKO ; SHOJI, TATSUMI ; UKIYO, NORITAKA ; TANIKAWA, ISAO</creator><creatorcontrib>MIZUTANI, MASAKI ; NAKAGAWA, KATSUMI ; IWASAKI, YUKIKO ; SHOJI, TATSUMI ; UKIYO, NORITAKA ; TANIKAWA, ISAO</creatorcontrib><description>Provided is a method of producing a semiconductor thin film wherein while a semiconductor thin film formed on a substrate is supported on a curved surface of a support member having the curved surface, the support member is rotated, thereby peeling the semiconductor thin film away from the substrate. Also provided is a method of producing a semiconductor thin film having the step of peeling a semiconductor thin film formed on a substrate away from the substrate, wherein the peeling step is carried out after the substrate is secured on a substrate support member without an adhesive. These provide the method of peeling the semiconductor thin film away from the substrate without damage and the method of holding the substrate without contamination.</description><edition>7</edition><language>eng ; fre ; ger</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; CRYSTAL GROWTH ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2003</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20030910&DB=EPODOC&CC=EP&NR=0965664B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20030910&DB=EPODOC&CC=EP&NR=0965664B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MIZUTANI, MASAKI</creatorcontrib><creatorcontrib>NAKAGAWA, KATSUMI</creatorcontrib><creatorcontrib>IWASAKI, YUKIKO</creatorcontrib><creatorcontrib>SHOJI, TATSUMI</creatorcontrib><creatorcontrib>UKIYO, NORITAKA</creatorcontrib><creatorcontrib>TANIKAWA, ISAO</creatorcontrib><title>Method of producing semiconductor thin film and method of producing solar cell using same</title><description>Provided is a method of producing a semiconductor thin film wherein while a semiconductor thin film formed on a substrate is supported on a curved surface of a support member having the curved surface, the support member is rotated, thereby peeling the semiconductor thin film away from the substrate. Also provided is a method of producing a semiconductor thin film having the step of peeling a semiconductor thin film formed on a substrate away from the substrate, wherein the peeling step is carried out after the substrate is secured on a substrate support member without an adhesive. These provide the method of peeling the semiconductor thin film away from the substrate without damage and the method of holding the substrate without contamination.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>CRYSTAL GROWTH</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2003</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZIj0TS3JyE9RyE9TKCjKTylNzsxLVyhOzc1Mzs8D8kryixRKMjLzFNIyc3IVEvNSFHKxqc_PSSxSSE7NyVEoLQYLJOam8jCwpiXmFKfyQmluBgU31xBnD93Ugvz41OKCxOTUvNSSeNcAA0szUzMzEydDYyKUAAB00zpO</recordid><startdate>20030910</startdate><enddate>20030910</enddate><creator>MIZUTANI, MASAKI</creator><creator>NAKAGAWA, KATSUMI</creator><creator>IWASAKI, YUKIKO</creator><creator>SHOJI, TATSUMI</creator><creator>UKIYO, NORITAKA</creator><creator>TANIKAWA, ISAO</creator><scope>EVB</scope></search><sort><creationdate>20030910</creationdate><title>Method of producing semiconductor thin film and method of producing solar cell using same</title><author>MIZUTANI, MASAKI ; NAKAGAWA, KATSUMI ; IWASAKI, YUKIKO ; SHOJI, TATSUMI ; UKIYO, NORITAKA ; TANIKAWA, ISAO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP0965664B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2003</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>CRYSTAL GROWTH</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>MIZUTANI, MASAKI</creatorcontrib><creatorcontrib>NAKAGAWA, KATSUMI</creatorcontrib><creatorcontrib>IWASAKI, YUKIKO</creatorcontrib><creatorcontrib>SHOJI, TATSUMI</creatorcontrib><creatorcontrib>UKIYO, NORITAKA</creatorcontrib><creatorcontrib>TANIKAWA, ISAO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MIZUTANI, MASAKI</au><au>NAKAGAWA, KATSUMI</au><au>IWASAKI, YUKIKO</au><au>SHOJI, TATSUMI</au><au>UKIYO, NORITAKA</au><au>TANIKAWA, ISAO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method of producing semiconductor thin film and method of producing solar cell using same</title><date>2003-09-10</date><risdate>2003</risdate><abstract>Provided is a method of producing a semiconductor thin film wherein while a semiconductor thin film formed on a substrate is supported on a curved surface of a support member having the curved surface, the support member is rotated, thereby peeling the semiconductor thin film away from the substrate. Also provided is a method of producing a semiconductor thin film having the step of peeling a semiconductor thin film formed on a substrate away from the substrate, wherein the peeling step is carried out after the substrate is secured on a substrate support member without an adhesive. These provide the method of peeling the semiconductor thin film away from the substrate without damage and the method of holding the substrate without contamination.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| language | eng ; fre ; ger |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Method of producing semiconductor thin film and method of producing solar cell using same |
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