Method for etching a silicon dioxide layer with a fluorocarbon plasma

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	DELLAGUARDIA, RONALD A, WILLE, WILLIAM C, ARMACOST, MICHAEL D, DOBUZINSKY, DAVID M, PASSOW, MICHAEL L, CONLEY, WILLARD E, COTLER-WAGNER, TINA J
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung: