Semiconductor structure with abrupt doping profile

A structure and method of forming an abrupt doping profile are described. A perferred embodiment incorporates a substrate 32, a first epitaxial layer 36 of Ge less than the critical thickness and having a P or As concentration greater than 5x10 atoms/cc, and a second epitaxial layer 40 having a chan...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	CARDONE, FRANK, ISMAIL, KHALID EZZELDIN, CHU, JACK OON
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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