Method and apparatus for reducing the first wafer effect
A method and apparatus for significantly reducing and even eliminating the First Wafer Effect is disclosed. In a first aspect, the First Wafer Effect is reduced by heating a deposition chamber (following an idle period) to its steady-state temperature by using a coil to which RF power is applied. In...
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| creator | NGAN, KENNY KING-TAI |
| description | A method and apparatus for significantly reducing and even eliminating the First Wafer Effect is disclosed. In a first aspect, the First Wafer Effect is reduced by heating a deposition chamber (following an idle period) to its steady-state temperature by using a coil to which RF power is applied. In a second aspect, the First Wafer Effect is reduced by similarly heating a deposition chamber (following an idle period) to a temperature greater than its steady-state temperature and then cooling the chamber to its steady-state temperature. Preferably a gas is flowed into the deposition chamber in both the first and second aspects to increase the chamber's heating rate. Further, a DC voltage may be applied to the deposition chamber's target to cause sputtering of target material on non-production objects for target conditioning. |
| format | Patent |
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In a first aspect, the First Wafer Effect is reduced by heating a deposition chamber (following an idle period) to its steady-state temperature by using a coil to which RF power is applied. In a second aspect, the First Wafer Effect is reduced by similarly heating a deposition chamber (following an idle period) to a temperature greater than its steady-state temperature and then cooling the chamber to its steady-state temperature. Preferably a gas is flowed into the deposition chamber in both the first and second aspects to increase the chamber's heating rate. Further, a DC voltage may be applied to the deposition chamber's target to cause sputtering of target material on non-production objects for target conditioning.</description><edition>6</edition><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>1998</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19981007&DB=EPODOC&CC=EP&NR=0869543A2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19981007&DB=EPODOC&CC=EP&NR=0869543A2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NGAN, KENNY KING-TAI</creatorcontrib><title>Method and apparatus for reducing the first wafer effect</title><description>A method and apparatus for significantly reducing and even eliminating the First Wafer Effect is disclosed. In a first aspect, the First Wafer Effect is reduced by heating a deposition chamber (following an idle period) to its steady-state temperature by using a coil to which RF power is applied. In a second aspect, the First Wafer Effect is reduced by similarly heating a deposition chamber (following an idle period) to a temperature greater than its steady-state temperature and then cooling the chamber to its steady-state temperature. Preferably a gas is flowed into the deposition chamber in both the first and second aspects to increase the chamber's heating rate. 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In a first aspect, the First Wafer Effect is reduced by heating a deposition chamber (following an idle period) to its steady-state temperature by using a coil to which RF power is applied. In a second aspect, the First Wafer Effect is reduced by similarly heating a deposition chamber (following an idle period) to a temperature greater than its steady-state temperature and then cooling the chamber to its steady-state temperature. Preferably a gas is flowed into the deposition chamber in both the first and second aspects to increase the chamber's heating rate. Further, a DC voltage may be applied to the deposition chamber's target to cause sputtering of target material on non-production objects for target conditioning.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
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| language | eng ; fre ; ger |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Method and apparatus for reducing the first wafer effect |
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