ELECTRONIC DEVICES INCLUDING ELECTRODES COMPRISING CHROMIUM NITRIDE AND A METHOD OF MANUFACTURING SUCH DEVICES

ELECTRONIC DEVICES INCLUDING ELECTRODES COMPRISING CHROMIUM NITRIDE AND A METHOD OF MANUFACTURING SUCH DEVICES

A thin-film circuit element such as a top-gate TFT has good quality electrical contacts formed between an electrode (151, 152, 155) of chromium nitride and the semiconductor film (50) of the circuit element and/or another conductive film such as a connection track (37,39,40) of, for example, alumini...

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Bibliographische Detailangaben
Hauptverfasser: TRAINOR, MICHAEL, JOSEPH, DEANE, STEVEN, CHARLES, FRENCH, IAN, DOUGLAS, MCGARVEY, BRIAN, PATRICK
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A thin-film circuit element such as a top-gate TFT has good quality electrical contacts formed between an electrode (151, 152, 155) of chromium nitride and the semiconductor film (50) of the circuit element and/or another conductive film such as a connection track (37,39,40) of, for example, aluminium. Chromium nitride has a particularly advantageous combination of propertied for use as such an electrode material, including, for example, low affinity for oxide growth even during deposition thereon of semiconductor, insulating and/or metal films, a doping potential to enhance ohmic contact to semiconductors, a barrier function against potential impurities, good thin-film processing compatibility, and hillock prevention in an underlying aluminium conductor.