Method of manufacturing a structure comprising a precious metal on a semiconductor element
A method for producing a noble metal-containing structure on a substrate, and a semiconductor component having such a noble metal-containing structure, include introducing a noble metal into a preliminary structure by converting a gaseous compound of the noble metal with a non-noble metal in a preli...
Gespeichert in:
Hauptverfasser: | , |
---|---|
Format: | Patent |
Sprache: | eng ; fre ; ger |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | WEINRICH, VOLKER MAZURE-ESPEJO, CARLOS |
description | A method for producing a noble metal-containing structure on a substrate, and a semiconductor component having such a noble metal-containing structure, include introducing a noble metal into a preliminary structure by converting a gaseous compound of the noble metal with a non-noble metal in a preliminary structure into elementary noble metal and a gaseous compound of the non-noble metal. The process continues until a desired amount of the non-noble metal in the preliminary structure is replaced by the noble metal. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP0856878B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP0856878B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP0856878B13</originalsourceid><addsrcrecordid>eNqNyjsKAjEUheE0FqLu4W5AUERNrYzYCBZWNkPInDiB5N6Qx_510AVYHf7DN1fPG-ooA4mjaLg5Y2vLnl9kqNTcpgJZiSn78r1ThvXSCkVUE0h4oojeCg8fL5kQEMF1qWbOhILVbxeKLt3jfF0jSY-SjAWj9t19o_cHfdSn7e4P8gbtcDs7</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method of manufacturing a structure comprising a precious metal on a semiconductor element</title><source>esp@cenet</source><creator>WEINRICH, VOLKER ; MAZURE-ESPEJO, CARLOS</creator><creatorcontrib>WEINRICH, VOLKER ; MAZURE-ESPEJO, CARLOS</creatorcontrib><description>A method for producing a noble metal-containing structure on a substrate, and a semiconductor component having such a noble metal-containing structure, include introducing a noble metal into a preliminary structure by converting a gaseous compound of the noble metal with a non-noble metal in a preliminary structure into elementary noble metal and a gaseous compound of the non-noble metal. The process continues until a desired amount of the non-noble metal in the preliminary structure is replaced by the noble metal.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; CAPACITORS ; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2007</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20070808&DB=EPODOC&CC=EP&NR=0856878B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20070808&DB=EPODOC&CC=EP&NR=0856878B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>WEINRICH, VOLKER</creatorcontrib><creatorcontrib>MAZURE-ESPEJO, CARLOS</creatorcontrib><title>Method of manufacturing a structure comprising a precious metal on a semiconductor element</title><description>A method for producing a noble metal-containing structure on a substrate, and a semiconductor component having such a noble metal-containing structure, include introducing a noble metal into a preliminary structure by converting a gaseous compound of the noble metal with a non-noble metal in a preliminary structure into elementary noble metal and a gaseous compound of the non-noble metal. The process continues until a desired amount of the non-noble metal in the preliminary structure is replaced by the noble metal.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CAPACITORS</subject><subject>CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2007</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyjsKAjEUheE0FqLu4W5AUERNrYzYCBZWNkPInDiB5N6Qx_510AVYHf7DN1fPG-ooA4mjaLg5Y2vLnl9kqNTcpgJZiSn78r1ThvXSCkVUE0h4oojeCg8fL5kQEMF1qWbOhILVbxeKLt3jfF0jSY-SjAWj9t19o_cHfdSn7e4P8gbtcDs7</recordid><startdate>20070808</startdate><enddate>20070808</enddate><creator>WEINRICH, VOLKER</creator><creator>MAZURE-ESPEJO, CARLOS</creator><scope>EVB</scope></search><sort><creationdate>20070808</creationdate><title>Method of manufacturing a structure comprising a precious metal on a semiconductor element</title><author>WEINRICH, VOLKER ; MAZURE-ESPEJO, CARLOS</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP0856878B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2007</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CAPACITORS</topic><topic>CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>WEINRICH, VOLKER</creatorcontrib><creatorcontrib>MAZURE-ESPEJO, CARLOS</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>WEINRICH, VOLKER</au><au>MAZURE-ESPEJO, CARLOS</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method of manufacturing a structure comprising a precious metal on a semiconductor element</title><date>2007-08-08</date><risdate>2007</risdate><abstract>A method for producing a noble metal-containing structure on a substrate, and a semiconductor component having such a noble metal-containing structure, include introducing a noble metal into a preliminary structure by converting a gaseous compound of the noble metal with a non-noble metal in a preliminary structure into elementary noble metal and a gaseous compound of the non-noble metal. The process continues until a desired amount of the non-noble metal in the preliminary structure is replaced by the noble metal.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng ; fre ; ger |
recordid | cdi_epo_espacenet_EP0856878B1 |
source | esp@cenet |
subjects | BASIC ELECTRIC ELEMENTS CAPACITORS CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
title | Method of manufacturing a structure comprising a precious metal on a semiconductor element |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-24T04%3A31%3A18IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=WEINRICH,%20VOLKER&rft.date=2007-08-08&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP0856878B1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |