Plasma reactor with heated source of a polymer-hardening precursor material
A general method of the invention is to provide a polymer-hardening precursor piece (60) (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber (10) during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polyme...
Gespeichert in:
| Hauptverfasser: | , , , , , , , , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng ; fre ; ger |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | MOHN, JON MARKS, JEFFREY COLLINS, KENNETH RODERICK, CRAIG YIN, GERALD ZHEYAO RICE, MICHAEL WONG, JERRY YANG, CHAN-LON GROECHEL, DAVID BUCHBERGER, DOUGLAS KESWICK, PETER |
| description | A general method of the invention is to provide a polymer-hardening precursor piece (60) (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber (10) during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece (60), and the heating/cooling apparatus (30, 32, 34, 36, 62) may be of any suitable type including apparatus which conductively or remotely heats the silicon piece. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP0838842A3</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP0838842A3</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP0838842A33</originalsourceid><addsrcrecordid>eNqNy70KwjAUhuEsDqLew7mBghiHrCIVwaWDezmkX00gf5ykiHdvBy_A6V2ed6seQ-AamQRsWxZ6--bIgRsmqnkRC8ozMZUcPhHSOZYJyacXFYFdpK5PXLV4Dnu1mTlUHH7dKbr1z-u9Q8kjamGLhDb2w9FoY86ni9Z_kC8HKjVV</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Plasma reactor with heated source of a polymer-hardening precursor material</title><source>esp@cenet</source><creator>MOHN, JON ; MARKS, JEFFREY ; COLLINS, KENNETH ; RODERICK, CRAIG ; YIN, GERALD ZHEYAO ; RICE, MICHAEL ; WONG, JERRY ; YANG, CHAN-LON ; GROECHEL, DAVID ; BUCHBERGER, DOUGLAS ; KESWICK, PETER</creator><creatorcontrib>MOHN, JON ; MARKS, JEFFREY ; COLLINS, KENNETH ; RODERICK, CRAIG ; YIN, GERALD ZHEYAO ; RICE, MICHAEL ; WONG, JERRY ; YANG, CHAN-LON ; GROECHEL, DAVID ; BUCHBERGER, DOUGLAS ; KESWICK, PETER</creatorcontrib><description>A general method of the invention is to provide a polymer-hardening precursor piece (60) (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber (10) during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece (60), and the heating/cooling apparatus (30, 32, 34, 36, 62) may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.</description><edition>6</edition><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>1999</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19990113&DB=EPODOC&CC=EP&NR=0838842A3$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19990113&DB=EPODOC&CC=EP&NR=0838842A3$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MOHN, JON</creatorcontrib><creatorcontrib>MARKS, JEFFREY</creatorcontrib><creatorcontrib>COLLINS, KENNETH</creatorcontrib><creatorcontrib>RODERICK, CRAIG</creatorcontrib><creatorcontrib>YIN, GERALD ZHEYAO</creatorcontrib><creatorcontrib>RICE, MICHAEL</creatorcontrib><creatorcontrib>WONG, JERRY</creatorcontrib><creatorcontrib>YANG, CHAN-LON</creatorcontrib><creatorcontrib>GROECHEL, DAVID</creatorcontrib><creatorcontrib>BUCHBERGER, DOUGLAS</creatorcontrib><creatorcontrib>KESWICK, PETER</creatorcontrib><title>Plasma reactor with heated source of a polymer-hardening precursor material</title><description>A general method of the invention is to provide a polymer-hardening precursor piece (60) (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber (10) during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece (60), and the heating/cooling apparatus (30, 32, 34, 36, 62) may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1999</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNy70KwjAUhuEsDqLew7mBghiHrCIVwaWDezmkX00gf5ykiHdvBy_A6V2ed6seQ-AamQRsWxZ6--bIgRsmqnkRC8ozMZUcPhHSOZYJyacXFYFdpK5PXLV4Dnu1mTlUHH7dKbr1z-u9Q8kjamGLhDb2w9FoY86ni9Z_kC8HKjVV</recordid><startdate>19990113</startdate><enddate>19990113</enddate><creator>MOHN, JON</creator><creator>MARKS, JEFFREY</creator><creator>COLLINS, KENNETH</creator><creator>RODERICK, CRAIG</creator><creator>YIN, GERALD ZHEYAO</creator><creator>RICE, MICHAEL</creator><creator>WONG, JERRY</creator><creator>YANG, CHAN-LON</creator><creator>GROECHEL, DAVID</creator><creator>BUCHBERGER, DOUGLAS</creator><creator>KESWICK, PETER</creator><scope>EVB</scope></search><sort><creationdate>19990113</creationdate><title>Plasma reactor with heated source of a polymer-hardening precursor material</title><author>MOHN, JON ; MARKS, JEFFREY ; COLLINS, KENNETH ; RODERICK, CRAIG ; YIN, GERALD ZHEYAO ; RICE, MICHAEL ; WONG, JERRY ; YANG, CHAN-LON ; GROECHEL, DAVID ; BUCHBERGER, DOUGLAS ; KESWICK, PETER</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP0838842A33</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>1999</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>MOHN, JON</creatorcontrib><creatorcontrib>MARKS, JEFFREY</creatorcontrib><creatorcontrib>COLLINS, KENNETH</creatorcontrib><creatorcontrib>RODERICK, CRAIG</creatorcontrib><creatorcontrib>YIN, GERALD ZHEYAO</creatorcontrib><creatorcontrib>RICE, MICHAEL</creatorcontrib><creatorcontrib>WONG, JERRY</creatorcontrib><creatorcontrib>YANG, CHAN-LON</creatorcontrib><creatorcontrib>GROECHEL, DAVID</creatorcontrib><creatorcontrib>BUCHBERGER, DOUGLAS</creatorcontrib><creatorcontrib>KESWICK, PETER</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MOHN, JON</au><au>MARKS, JEFFREY</au><au>COLLINS, KENNETH</au><au>RODERICK, CRAIG</au><au>YIN, GERALD ZHEYAO</au><au>RICE, MICHAEL</au><au>WONG, JERRY</au><au>YANG, CHAN-LON</au><au>GROECHEL, DAVID</au><au>BUCHBERGER, DOUGLAS</au><au>KESWICK, PETER</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Plasma reactor with heated source of a polymer-hardening precursor material</title><date>1999-01-13</date><risdate>1999</risdate><abstract>A general method of the invention is to provide a polymer-hardening precursor piece (60) (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber (10) during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece (60), and the heating/cooling apparatus (30, 32, 34, 36, 62) may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng ; fre ; ger |
| recordid | cdi_epo_espacenet_EP0838842A3 |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Plasma reactor with heated source of a polymer-hardening precursor material |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T14%3A17%3A36IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=MOHN,%20JON&rft.date=1999-01-13&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP0838842A3%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |