LASER DIODE WITH AN ION-IMPLANTED REGION

A method of fabricating a semiconductor laser device is disclosed in which the device comprises one or more ion-implanted regions as a means to decrease the occurrence of device failures attributable to dark-line defects. The ion-implanted regions, which are formed between the laser gain cavity and...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	BEYEA, DANA, M, DIXON, TODD, MARTIN, CLAUSEN, EDWARD, M., JR
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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