Method of manufacturing a gate electrode for a MOS structure

Method of manufacturing a gate electrode for a MOS structure

A gate electrode for an MOS structure, such as a short-channel MOS transistor, is produced. First, a hard mask is created, using a spacer of the material of the gate electrode as the etching mask, and the hard mask is used to structure the gate electrode. The method is suitable particularly for the...

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1. Verfasser: LUSTIG, BERNHARD
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Sprache:eng ; fre ; ger
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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description A gate electrode for an MOS structure, such as a short-channel MOS transistor, is produced. First, a hard mask is created, using a spacer of the material of the gate electrode as the etching mask, and the hard mask is used to structure the gate electrode. The method is suitable particularly for the production of gate electrodes with very thin gate dielectrics with channel lengths below 100 nm.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Method of manufacturing a gate electrode for a MOS structure
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