A method of fabricating a DRAM with increased capacitance

A method for forming a dynamic random access memory with increased capacitance includes preparing (36) ultra-fine particles in a microemulsion. The particles are deposited (38) on the lower electrode layer of the memory cell. A micro-villus pattern is then formed (40) on the lower electrode layer, u...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	CRENSHAW, DARIUS L, KUMAR, PROMOD
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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