A method of fabricating a DRAM with increased capacitance

A method of fabricating a DRAM with increased capacitance

A method for forming a dynamic random access memory with increased capacitance includes preparing (36) ultra-fine particles in a microemulsion. The particles are deposited (38) on the lower electrode layer of the memory cell. A micro-villus pattern is then formed (40) on the lower electrode layer, u...

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Hauptverfasser: CRENSHAW, DARIUS L, KUMAR, PROMOD
Format: Patent
Sprache:eng ; fre ; ger
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator CRENSHAW, DARIUS L
KUMAR, PROMOD
description A method for forming a dynamic random access memory with increased capacitance includes preparing (36) ultra-fine particles in a microemulsion. The particles are deposited (38) on the lower electrode layer of the memory cell. A micro-villus pattern is then formed (40) on the lower electrode layer, using the particles as a mask. A layer of HSG polysilicon may then be deposited (42) on the micro-villus pattern. A dielectric and upper electrode are then formed (44) overlying the lower electrode to form a storage capacitor for the dynamic random access memory.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title A method of fabricating a DRAM with increased capacitance
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