Application of thin crystalline Si3N4 liners in shallow trench isolation (STI) structures
Silicon integrated circuits use a crystalline layer of silicon nitride (Si3N4) in shallow trench isolation (STI) structures as an O2-barrier film. The crystalline Si3N4 lowers the density of electron traps as compared with as-deposited, amorphous Si3N4. Further, a larger range of low-pressure chemic...
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| creator | HO, HERBERT FUGARDI, STEPHEN HAMMERL, ERWIN AJMERA, ATUL MOSEMAN, JAMES E DOBUZINSKY, DAVID M PALM, J. HERBERT RAMAC, SAMUEL C |
| description | Silicon integrated circuits use a crystalline layer of silicon nitride (Si3N4) in shallow trench isolation (STI) structures as an O2-barrier film. The crystalline Si3N4 lowers the density of electron traps as compared with as-deposited, amorphous Si3N4. Further, a larger range of low-pressure chemical-vapor deposited (LPCVD) Si3N4 films can be deposited, providing a larger processing window for thickness controllability. An LPCVD-Si3N4 film is deposited at temperatures of 720 DEG C to 780 DEG C. The deposited film is in an amorphous state. Subsequently, a high-temperatures rapid-thermal anneal in pure nitrogen or ammonia is conducted at 1050 DEG C to 1100 DEG C for 60 seconds. |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS |
| title | Application of thin crystalline Si3N4 liners in shallow trench isolation (STI) structures |
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