METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE WITH BiCMOS CIRCUIT

A method of manufacturing a semiconductor device with a bipolar transistor (1) and a MOS transistor (2) formed in a silicon body (3) which for this purpose is provided with a field insulation region (4) by which semiconductor regions (6, 7) adjoining a surface (5) of said body are mutually insulated...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	JANSEN, ALEXANDER, CECILIA, LEONARD, KOSTER, RONALD, VAN DER WEL, WILLEM, PRUIJMBOOM, ARMAND
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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